Engineering Heterogeneous Materials and Devices for 3D-Integrated Energy-Efficient Electronics

#3d #du #sb #device #energy #materials #EDS#Integrated#efiicient#Electronics
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IEEE EDS Student Branch Chapter is thrilled to host an insightful seminar titled “Engineering Heterogeneous Materials and Devices for 3D-Integrated Energy-Efficient Electronics” , featuring Dr. Asir Intisar Khan as the keynote speaker. This event will explore groundbreaking advancements in integrating diverse materials and devices into three-dimensional architectures, paving the way for the next generation of energy-efficient electronic systems.

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  • Date: 25 May 2025
  • Time: 08:00 AM UTC to 11:00 AM UTC
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  • Room No. 208, Department of Electrical and Electronic Engineering, University of Dhaka
  • Dhaka - 1000
  • Dhaka, Dhaka
  • Bangladesh 1000
  • Building: Department of Electrical and Electronic Engineering, University of Dhaka
  • Room Number: Room No. 208
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  Speakers

Dr. Asir Intisar Khan

Topic:

Engineering Heterogeneous Materials and Devices for 3D-Integrated Energy-Efficient Electronics

With the rise in global data demands, energy efficiency in electronics has become a defining challenge for sustainable progress in AI, healthcare, IoT, and beyond. Today’s electronics, constrained by materials and architectures that separate computing and memory, are approaching their energy and latency limits for data-intensive applications. Emerging solutions such as 3D integration of logic and memory devices offer great promise; however, their realization requires innovations in materials, transport physics, device engineering, and semiconductor-compatible fabrication. I will discuss how atomic-scale engineering and integrating heterogeneous materials and devices can address these intertwined challenges in this talk. I will highlight two examples from our work: (1) electro-thermal and interface engineering in chalcogenide heterostructures enabling low-power memory on both rigid and flexible platforms, and (2) exceptional surface transport and reduced electrical resistivity in non-crystalline semimetals, introducing new avenues in low-resistance electronics. I will conclude with my group’s vision for advancing heterogeneous materials and multifunctional nanodevices to drive the future of 3D-integrated, energy-efficient electronics.

 

Biography:

Dr. Asir Intisar Khan is a postdoctoral scholar at the Electrical Engineering and Computer Sciences department at UC Berkeley. Asir received his PhD and MS in Electrical Engineering from Stanford University, where he was awarded the Stanford Graduate Fellowship. Asir’s research focuses on advancing energy-efficient electronics through atomic-scale engineering of heterogeneous materials and nanodevices, addressing their energy limits. His interdisciplinary contributions have been recognized with the 2022 IEEE-EDS PhD Fellowship, Materials Research Society (MRS) Gold Graduate Award, and 2023 AVS Russell & Sigurd Varian Award. He received the Best Technology Paper Award at the 2022 IEEE Symposium on VLSI Technology and Circuits, along with multiple Best Presenter Awards, including at the 2022 MRS Fall meeting, 2023 SRC TECHCON, and 2023 AVS Symposium. Asir has held research intern positions at TSMC and IBM TJ Watson and served as a Fellow at the Stanford Emerging Technology Review.