Measurement of Wide Bandgap Power Devices

#Wide-Bandgap #(WBGT) #Gallium #Nitride #(GaN) #Silicon #Carbide #(SiC) #Power #Devices

This webinar comprehensively explores the challenges involved in measuring Wide-Bandgap (WBG) power devices, with practical examples for illustration. It will cover the key measurement methods, equipment, and probes to accurately capture relevant signals. Energy conversion, from generation to consumption, involves several transformations, each presenting unique challenges. As the demand for efficient energy transmission increases, new semiconductor technologies such as Gallium Nitride (GaN) and Silicon Carbide (SiC) are being developed to address these needs. These Wide-Bandgap (WBG) technologies offer higher switching frequencies, reduced power losses, and improved transmission capabilities. However, these advancements also bring new measurement challenges. This session will explore the measurement techniques and best practices necessary for characterizing transistor switching circuits, including critical current and voltage measurements on the high-side transistor of a WBG power system.