David Bondurant of Vertical Memory

“If we make them smaller, we can make them faster” has been the approach to building faster computers over the last 70-years starting with the first transistors and continuing as we built increasingly more complex integrated circuits and more recently we have gone Beyond Moore’s Law to fabricate advanced supercomputers and AI computers using 3D Memory and 3D Packaging.  In this talk, I review recent trends in 3D Memory and 3D Packaging which are driving these high performance system towards wafer scale systems with multiple reticle sized processors and 3D memories.  We observe the next generation HBM4 high bandwidth 3D DRAM and the emergence of the HBF, high bandwidth Flash memory, to increase memory capacity to serve larger databases.

Biography:

David Bondurant has been involved with the computer and semiconductor industry for 54-years.  He was a computer architect at Control Data, Sperry-Univac, and Honeywell.  He was involved with the government-sponsored advanced semiconductor program called VHSIC (Very High Speed Integrated Circuits) at Univac & Honeywell where he developed microprocessor and ASIC semiconductor products in bipolar CML, CMOS, and radiation hard CMOS.  He was involved with emerging non-volatile RAM marketing at industry leading companies, Ramtron (FRAM), Enhanced Memory Systems (EDRAM, ESRAM), Simtek (non-volatile SRAM), and Freescale Semiconductor/Everspin Technologies (MRAM) as they became viable over the last 30-years.  His consulting firm, Vertical Memory, has been following developments in 3D Memory and 3D Packaging since 2002.